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Significantly Improved Minority Carrier Lifetime Observed in a Long-Wavelength Infrared III-V Type-II Superlattice Comprised of InAs/InAsSb

ContributorsSteenbergen, E. H. (Author) / Connelly, B. C. (Author) / Metcalfe, G. D. (Author) / Shen, H. (Author) / Wraback, M. (Author) / Lubyshev, D. (Author) / Qiu, Y. (Author) / Fastenau, J. M. (Author) / Liu, A. W. K. (Author) / Elhamri, S. (Author) / Cellek, O. O. (Author) / Zhang, Yong-Hang (Author)
Created2011
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A Semi-Analytical Model for Semiconductor Solar Cells

ContributorsDing, Ding (Author) / Johnson, Shane R. (Author) / Yu, S.-Q. (Author) / Wu, S.-N. (Author) / Zhang, Yong-Hang (Author)
Created2011
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Influence of Temperature Ramp on the Materials Properties of GaSb Grown on ZnTe Using Molecular Beam Epitaxy

ContributorsFan, Jin (Author) / Ouyang, Lu (Author) / Liu, Xinyu (Author) / Ding, Ding (Author) / Furdyna, Jacek K. (Author) / Smith, David J. (Author) / Zhang, Yong-Hang (Author)
Created2012
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Structural Properties of InAs/InAs1-xSbx Type-II Superlattices Grown by Molecular Beam Epitaxy

ContributorsOuyang, Lu (Author) / Steenbergen, Elizabeth H. (Author) / Zhang, Yong-Hang (Author) / Nunna, Kalyan (Author) / Huffaker, Diana L. (Author) / Smith, David J. (Author)
Created2012
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Strain-Balanced InAs_InAs1-xSbx Type-II Superlattices Grown by Molecular Beam Epitaxy on GaSb Substrates

ContributorsSteenbergen, Elizabeth H. (Author) / Nunna, Kalyan (Author) / Ouyang, Lu (Author) / Ullrich, Bruno (Author) / Huffaker, Diana L. (Author) / Smith, David J. (Author) / Zhang, Yong-Hang (Author)
Created2012